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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC212/D PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER BC212,B BC213 BC214 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 212 -50 -60 BC 213 -30 -45 -5.0 -100 350 2.8 1.0 8.0 - 55 to +150 BC 214 -30 -45 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C 1 2 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Collector - Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -10 mA, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector-Emitter Leakage Current (VCB = -30 V) Emitter-Base Leakage Current (VEB = -4.0 V, IC = 0) BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 Symbol V(BR)CEO Min -50 -30 -30 -60 -45 -45 -5 -5 -5 -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max -- -- -- -- -- -- -- -- -- -15 -15 -15 -15 -15 -15 Unit Vdc V(BR)CBO Vdc V(BR)EBO Vdc ICBO nAdc IEBO nAdc Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 BC212,B BC213 BC214 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = -10 Adc, VCE = -5.0 Vdc) hFE BC212 BC213 BC214 BC212 BC213 BC214 BC212, BC214 BC213 VCE(sat) -- -- VBE(sat) VBE(on) -- -0.6 -0.10 -0.25 -1.0 -0.62 -- -0.6 -1.4 -0.72 Vdc Vdc 40 40 100 60 80 140 -- -- -- -- -- -- -- -- 120 140 -- -- -- -- -- 600 -- -- Vdc -- (IC = -2.0 mAdc, VCE = -5.0 Vdc) (IC = -100 mAdc, VCE = -5.0 Vdc)(1) Collector - Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -100 mAdc, IB = -5.0 mAdc)(1) Base - Emitter Saturation Voltage (IC = -100 mAdc, IB = -5.0 mAdc) Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) DYNAMIC CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) fT BC212 BC214 BC213 Cob NF BC214 BC212, BC213 hfe BC212 BC213 BC214 BC212B 60 80 140 200 -- -- -- -- -- -- -- 400 -- -- -- -- 2 10 -- -- -- -- -- 280 320 360 -- -- -- -- 6.0 pF dB MHz Common-Base Output Capacitance (VCB = -10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = -0.2 mAdc, VCE = -5.0 Vdc, RS = 2.0 k , f = 1.0 kHz) (IC = -0.2 mAdc, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) Small-Signal Current Gain (IC = -2.0 mAdc, VCE = -5.0 Vdc, f = 1.0 kHz) 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BC212,B BC213 BC214 2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 Figure 1. Normalized DC Current Gain f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 2. "Saturation" and "On" Voltages 400 300 200 150 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) -50 VCE = -10 V TA = 25C 10 Cib 7.0 C, CAPACITANCE (pF) 5.0 TA = 25C 3.0 Cob 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) -20 -30 -40 Figure 3. Current-Gain -- Bandwidth Product Figure 4. Capacitances 0.5 0.3 VCE = -10 V f = 1.0 kHz TA = 25C r b, BASE SPREADING RESISTANCE (OHMS) 1.0 hob, OUTPUT ADMITTANCE (OHMS) 150 140 130 VCE = -10 V f = 1.0 kHz TA = 25C 0.1 0.05 0.03 120 110 0.01 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -10 100 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -10 Figure 5. Output Admittance Figure 6. Base Spreading Resistance Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 BC212,B BC213 BC214 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data *BC212/D* BC212/D |
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